Atomic Layer Deposition System

Atomic Layer Deposition System

atomic layer deposition system
Features:
Material:Stainless steel
Vacuum: ≤10-3 Torr
Wafer size up to 300mm
Excellent program control and intrinsic cycle time < 1 sec Excellent film quality and uniformity Wafer stage temperature 400 ℃ Five precursor modules and two process gases Applications:
High-k gate oxides
Coating of nano-porous structures
Storage capacitor dielectrics
Diffusion barriers, seed for copper metalization and Passivation layers
Blocking layers for moisture and gas-impermeable structures


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